Do you know who push the GaN chargers be hot?

The fast GaN charger hot market
GaN has a higher band gap (about 3.4 eV) and higher electron mobility than SiC. Its breakdown field strength is 10 times that of Si, the electron mobility is 2 times that of Si, the output charge and gate charge are both 10 times lower than that of silicon, and the reverse recovery charge is almost zero, which is the key to high-frequency operation. It can be said that GaN is the most suitable technology in modern resonant topologies. In theory, GaN has greater technical advantages than traditional silicon MOSFETs, and more and more "players" have joined. As prices continue to decrease, GaN devices are becoming a strong competitor in the power market. According to the forecast of market research organization Yole Developpment, although the existing GaN market is still small compared with the US$32.8 billion silicon power device market, GaN devices have begun to penetrate into many application areas. When it comes to the most eye-catching applications or the most popular applications in the market, non-GaN chargers are none other than GaN chargers.

Take some instances of GaN charger
Behind the rapid commercialization of every new technology, there will always be many technological "pushers", and GaN chargers are no exception. As this market continues to heat up, various GaN manufacturers are also stepping up to launch new solutions to meet market needs.
Shenzhen SOY Technology, a professional power supply manufacturer, which also deploy the market and developed GaN product solutions in advance, and has mass production.

Our 65W GaN charger solution:
Single output:
USB-C1: 3.3-21V3A, 5V3A, 9V3A, 12V3A, 15V3A, 20V3.25A (65W Max)
USB-C2: 3.3-21V3A, 5V3A, 9V3A, 12V3A, 15V3A, 20V3.25A (65W Max)
USB-A: 4.5V5A, 5V4.5A, 8V3A, 9V3A, 11V3A, 12V3A, 15V3A, 20V3.25A (65W Max)
Dual output:
USB-A + C1: 45W + 18W (63W Max)
USB-A + C2: 45W + 18W (63W Max)
USB-C1+C2: 45W + 18W (63W Max)
Triple output:
USB-C1+ C2+A: 30W + 5V3A + 5V3A (60W Max)
Size: 60 x 60 x 28 mm or ODM
GaN Chipset: INN650D02-650V
Protocol chip:WT6636F
PW chip:NCP1342
DDIC chip: FAN3111E (Driver chip)
Synchronous rectifier chip: NCP4306
Compatible with: QC3.0/FCP/SCP/PD3.0/AFC/PPS/PE2.0 etc quick charging
Ambient temperature: 25℃,highest surface temperature may around 75℃

Application: support all your USB-C devices, inlcuding smart phones, tablet, and laptops
According to statistics, there are currently more than 50 mobile fast charging products and platforms that use GaN Fast on the market, including wall chargers being mass-produced by top OEMs, with power ranging from 24W to 300W. Samsung, Oppo, Xiaomi and Verizon are all Navitas customers. The charger with GaNFast has a USB-C function, which can not only provide enough power to quickly charge laptops, but also quickly and safely charge all other mobile devices such as smartphones, tablets, headsets, and VR headsets.

At present, power applications such as fast charging of mobile phones are the main application market for GaN power devices. Many of those who entered this field before were small and medium-sized enterprises, and their market influence and attention were slightly insufficient. More importantly, when big brand companies begin to introduce their charging products based on GaN technology to the market, GaN charging products can also drive the fire. Have you also joined this hot market?