What is the GaN charger?

The full name of GaN is Gallium Nitride, it is a new type of semiconductor material, which has the characteristics of wide band gap, high thermal conductivity, high temperature resistance, radiation resistance, acid and alkali resistance, high strength and high hardness. It is used in new energy vehicles, rail transit, smart grids, semiconductor lighting, and a new generation of mobile communications. It is known as the 3rd generation of semiconductor materials. With the technology breakthrough cost controlled, GaN is also widely used in consumer electronics, etc. In the field, the charger is one of them.

Last year, this new charging technology has gradually entered the consumer's vision-gallium nitride, its appearance in the lifeless charger industry has set off an unprecedented wave of technological iteration. GaN is known as the core material of the third generation semiconductor. Compared with silicon, gallium nitride has a wider band gap, and the wide band gap also means that gallium nitride can withstand higher voltages than silicon and has better conductivity. In short, the two materials are much more efficient than silicon at the same volume. If GaN replaces all current electronic equipment, it may reduce the power consumption of electronic products by another 10% or 25%.

The advantages:

The charger of gallium nitride components shows high efficiency, low heat generation, high power with small size.

The disadvantages:

GaN material is inadequate currently. For example, the cost is not cheap and the production capacity is limited. If there is no way to increase the cost of reducing production capacity in industrialization, it is not easy to replace silicon in the short term.